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ARCHIVE INFORMATION
MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration
PCN12895 for more details.
MRF6P3300HR3 MRF6P3300HR5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with fre‐
quencies from 470 to 860 MHz. The high gain and broadband performance of
this device make it ideal for large- signal, common- source amplifier applica‐
tions in 32 volt analog or digital television transmitter equipment.
?
Typical Narrowband Two-Tone Performance @ 860 MHz: VDD
= 32 Volts,
IDQ
= 1600 mA, P
out
= 270 Watts PEP
ficiency — 44.1%
?
Typical Narrowband DVB-T OFDM Performance @ 860 MHz: VDD
=
32 Volts, IDQ
= 1600 mA, P
out
= 60 Watts Avg., 8K Mode, 64 QAM
ficiency — 29%
@ 3.9 MHz Offset — -57 dBc @ 20 kHz Bandwidth
?
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW
Output Power
Features
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Designed for Push-Pull Operation Only
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
RoHS Compliant
?
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
-
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 300 W CW
Case Temperature 82°C, 220 W CW
Case Temperature 79°C, 100 W CW
Case Temperature 81°C, 60 W CW
RθJC
0.23
0.24
0.27
0.27
°C/W
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6P3300H
Rev. 2, 10/2008
Freescale Semiconductor
Technical Data
MRF6P3300HR3
MRF6P3300HR5
470-860 MHz, 300 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 375G-04, STYLE 1
NI-860C3
?
Freescale Semiconductor, Inc.,
2005-2006, 2008. All rights reserved.
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